- All sections
- C - Chemistry; metallurgy
- C30B - Single-crystal growth; unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; refining by zone-melting of material; production of a homogeneous polycrystalline material with defined structure; single crystals or homogeneous polycrystalline material with defined structure; after-treatment of single crystals or a homogeneous polycrystalline material with defined structure; apparatus therefor
- C30B 11/06 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
Patent holdings for IPC class C30B 11/06
Total number of patents in this class: 31
10-year publication summary
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4
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4
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3
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1
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0
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1
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0
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0
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2
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3
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| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| The 13th Research Institute of China Electronics Technology Group Corporation | 118 |
5 |
| Sumitomo Electric Industries, Ltd. | 14131 |
4 |
| Fisk University | 20 |
3 |
| NGK Insulators, Ltd. | 4589 |
2 |
| Consolidated Nuclear Security, LLC | 124 |
2 |
| REC Solar Norway AS | 14 |
2 |
| CapeSym, Inc. | 9 |
1 |
| Globalwafers Co., Ltd. | 561 |
1 |
| JX Nippon Mining & Metals Corporation | 1576 |
1 |
| Nihon Kessho Kogaku Co., Ltd. | 13 |
1 |
| Osaka University | 3143 |
1 |
| Rensselaer Polytechnic Institute | 776 |
1 |
| Sumco Corporation | 1116 |
1 |
| Technical Institute of Physics and Chemistry, Chinese Academy of Sciences | 37 |
1 |
| University of Tennessee Research Foundation | 727 |
1 |
| GE Infrastructure Technology, LLC | 5873 |
1 |
| Consolidates Nuclear Security, LLC | 1 |
1 |
| Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | 6132 |
1 |
| Hangzhou Garen Semiconductor Co., Ltd. | 1 |
1 |
| Other owners | 0 |